650V GaN MOSFET DFN8x8
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Parameter
| Voltage | Part Number | Package | Id (A) (Tc=25℃) | PD (W) (Tc=25℃) | VGS (V) | VTH-Typ (V) | Ron(mR) @ VGS=18V, 25℃ | Ciss-Typ (pF) | Coss-Typ (pF) | Crss-Typ (pF) | Qg-Typ (nC) | Part Status | |
| 650V | NCEG065A120V | DFN8x8 | 14 | 90 | -10/+7 | 2.50 | 120.00 | 156.00 | 102.0 | 36.0 | 0.5 | 3.0 | Production |
| 650V | NCEG065A165V | DFN8x8 | 10 | 78 | -10/+7 | 2.50 | 165.00 | 210.00 | 75.0 | 23.0 | 0.2 | 2.0 | Production |
| 650V | NCEG065A270V | DFN8x8 | 6.5 | 55 | -10/+7 | 2.50 | 270.00 | 350.00 | 49.0 | 14.0 | 0.2 | 1.6 | Coming Soon |
| 650V | NCEG065A330V | DFN8x8 | 5.5 | 45 | -10/+7 | 2.50 | 330.00 | 429.00 | 40.0 | 12.0 | 0.1 | 1.1 | Coming Soon |
| 650V | NCEG065A470V | DFN8x8 | 3.5 | 35 | -10/+7 | 2.50 | 470.00 | 611.00 | 30.0 | 8.0 | 0.1 | 0.7 | Coming Soon |
| 650V | NCEG065A600V | DFN8x8 | 2.2 | 27 | -10/+7 | 2.50 | 600.00 | 780.00 | 20.0 | 5.0 | 0.1 | 0.4 | Coming Soon |
Product Overview
The newly launched E-mode GaN HEMT device by NCE Power is a third-generation compound semiconductor power device. Unlike traditional silicon-based MOSFET power devices, GaN HEMT devices use two-dimensional electron gas (2DEG) — which has a much higher mobility than bulk electrons — to conduct current. This not only gives them the advantage of high switching frequency, but also enables reverse conduction capability, effectively avoiding the reverse recovery effect of the body diode in traditional MOSFET devices.
In addition, the gate charge and output charge of GaN HEMT devices are more than 10 times smaller than those of silicon-based devices of the same specification, and their reverse recovery charge is almost zero, making them particularly suitable for high-frequency applications.
Leveraging these advantages, GaN HEMT power devices are ideal for high-efficiency, high-power-density or high-frequency application fields, such as server power supplies, on-board OBCs, adapters/chargers, data communications and audio products.
Product Features:
- Enhancement mode — normally-off device
- Low output charge and gate charge
- No reverse recovery charge
- High switching frequency
Application Advantages:
- Improve system power density
- Greatly reduce switching losses and reverse recovery losses, enhancing efficiency
- Reduce system complexity
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