650V SiC MOSFET TO-263-7L
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Details
Parameter
| Voltage | Part Number | Package | Id (A) (Tc=25℃) | PD (W) (Tc=25℃) | VGS (V) | VTH-Typ (V) | Ron(mR) @ VGS=18V, 25℃ | Ciss-Typ (pF) | Coss-Typ (pF) | Crss-Typ (pF) | Qg-Typ (nC) | Part Status | |
| 650V | NCES065R030SD | TO-263-7L | 70 | 258 | -4/+22 | 4.40 | 30.00 | 39.00 | 1680.0 | 89.0 | 42.0 | 84.0 | Production |
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Product Overview
Silicon carbide (SiC) devices belong to wide-bandgap semiconductor devices. Compared with commonly used silicon-based devices, their higher breakdown electric field strength and thermal conductivity make them particularly suitable for high-voltage and high-power applications.
NCE Power’s SiC MOSFET product series not only fully leverages the advantages of silicon carbide but also further enhances the reliability of the devices based on application requirements. In terms of product advantages, this series features low on-resistance, small switching losses, and easy drivability. In terms of reliability, the series also has characteristics such as high gate oxide stability, excellent high-temperature performance, strong anti-avalanche capability, and robust short-circuit withstand capability.
It is widely applied in various high-efficiency, high-density, and high-operating-frequency power conversion applications, such as new energy vehicles, solar inverters, charging piles, and server power supplies.
Product Features:
- High gate oxide reliability
- Strong short-circuit and anti-avalanche capability
- Low device capacitance and gate charge
- Low switching losses
- Excellent high-temperature performance
Application Advantages:
- Reduced system volume
- Lowered system complexity
- IGBT-compatible driving (+18V)
- High power density
- Small switching losses, improving system efficiency
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