1200V-1350V IGBT Gen.6 TO-3P
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Details
Parameter
| Voltage | Part Number | Package | Ic (A) (Tc=100℃) | PD (W) (Tc=25℃) | VGE (V) | VTH-Typ (V) | VCE(sat)(V) @ VGE=15V, 25℃ | Switching Frequency | Tsc (us) | Part Status | |
| 1200V | NCE15TD120BP | TO-3P | 15 | 300 | ±30 | 5.50 | 1.55 | 1.80 | 0~20KHz | 10 | Production |
| 1200V | NCE25TD120BP | TO-3P | 25 | 365 | ±30 | 5.50 | 1.55 | 1.80 | 0~20KHz | 10 | Production |
| 1200V | NCE40TD120BP | TO-3P | 40 | 468 | ±30 | 5.50 | 1.55 | 1.80 | 0~20KHz | 10 | Production |
| 1200V | NCE50TD120BP | TO-3P | 50 | 535 | ±30 | 5.50 | 1.55 | 1.80 | 0~20KHz | 10 | Production |
| 1200V | NCE15TD120LP | TO-3P | 15 | 300 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1200V | NCE25TD120LP | TO-3P | 25 | 365 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1200V | NCE40TD120LP | TO-3P | 40 | 468 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1200V | NCE50TD120LP | TO-3P | 50 | 535 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1200V | NCE75TD120LP | TO-3P | 75 | 833 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1350V | NCE15TD135LP | TO-3P | 15 | 300 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1350V | NCE25TD135LP | TO-3P | 25 | 365 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
| 1350V | NCE40TD135LP | TO-3P | 40 | 468 | ±30 | 5.50 | 1.50 | 1.75 | 0~10KHz | / | Production |
Product Overview
Xinjie adopts high-cell-density device structure design, carrier storage technology, multi-gradient buffer layer technology, and advanced ultra-thin chip processing technology to launch the new Gen.7 series IGBT products. This series of products features ultra-low saturation voltage drop (VCE(sat)), higher power density, excellent trade-off characteristics of switching losses (Eon, Eoff), and better switching performance. At the same time, they have high reliability, which can significantly reduce system losses and provide more sufficient margin for system design.
The Gen.7 series IGBT products cover voltage platforms such as 650V, 750V, and 1200V, with current specifications ranging from 6A to 200A. The package types include TO-252, TO-263, TO-220, TO-220F, TO-247-3L, TO-247-4L, TO-247P-3L, TO-247P-4L, etc.
The Gen.7 series IGBT products have pioneered the world-leading high-current IGBT discrete series, such as 650V/750V: 100A~200A series and 1200V: 100A~160A series. These products provide more options for improving system power density and reducing system costs.
Based on the characteristics of different application fields, we have developed targeted products: the general-purpose B series suitable for most applications, the V series with high saturation current and low saturation voltage drop for photovoltaic new energy applications, and the U series for high-frequency applications. The new Gen.7 series IGBT products can be widely used in markets such as new energy vehicles, new energy power generation, industrial frequency conversion, inverters, and UPS.
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