100V SGT P Channel Power MOSFET
+
  • 100V SGT P Channel Power MOSFET

100V SGT P Channel Power MOSFET

Trench MOSFET: Key Features •High cell density design •Ideal for miniaturized packages •G-S ESD protection embedded •Voltage range: 12V-200V SGT MOSFET Key Features •Advance shield gate trench technology •Ultra low gate charge •High power integration •Voltage range: 30V-250V


Details


Part No. Package VDS(V) Vgs Max(V) ID(A)@TA=25℃(Max.) VGS(th)(V)(Typ.) Rds(on)(mΩ)@Vgs=10V(Max.) Rds(on)(mΩ)@Vgs=4.5V(Max.)

WMB240P10HG4

隐藏域

PDFN5*6-8L

隐藏域

-100

隐藏域

±20

隐藏域

-53

隐藏域

-2.9

隐藏域

26

隐藏域

/

隐藏域

WMM240P10HG4

隐藏域

TO-263

隐藏域

-100

隐藏域

±20

隐藏域

-60

隐藏域

-2.9

隐藏域

26

隐藏域

/

隐藏域

Keyword:

Inquire

Dear customer,if you like to learn more about our products,please let us know and we will contact you as soon as possible

Action
Submit

Related Products