100V SGT P Channel Power MOSFET
Trench MOSFET:
Key Features
•High cell density design
•Ideal for miniaturized packages
•G-S ESD protection embedded
•Voltage range: 12V-200V
SGT MOSFET
Key Features
•Advance shield gate trench technology
•Ultra low gate charge
•High power integration
•Voltage range: 30V-250V
Category:
Details
| Part No. | Package | VDS(V) | Vgs Max(V) | ID(A)@TA=25℃(Max.) | VGS(th)(V)(Typ.) | Rds(on)(mΩ)@Vgs=10V(Max.) | Rds(on)(mΩ)@Vgs=4.5V(Max.) |
|---|---|---|---|---|---|---|---|
|
WMB240P10HG4 |
PDFN5*6-8L |
-100 |
±20 |
-53 |
-2.9 |
26 |
/ |
|
WMM240P10HG4 |
TO-263 |
-100 |
±20 |
-60 |
-2.9 |
26 |
/ |
Keyword: